Click to expand full text
APT10057WVR
1000V 17.3A 0.570Ω
POWER MOS V ®
TO-267
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
V®
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • New TO-267 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT10057WVR UNIT Volts Amps
1000 17.3 69.2 ±30 ±40 450 3.6 -55 to 150 300 17.
APT10057WVR Datasheet
