APT17N80CC3 Datasheet | Advanced Power Technology

.. 800V 11.5A 0.320Ω Super Junction MOSFET C O OLMOS Power Semiconductors TO-254 - Ultra low RDS(ON) - Low Miller Capacitance - Ultra Low Gate Charge, Qg - Avalanche Energy Rated - Hermetic TO-254 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25°C unless otherwise specified. APT17N80CC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 800 11.5 34.5 ±20 ±30 104 0.83 -55 to 150 260 50 17 0.5 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction...