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APT65GP60B2
600V
POWER MOS 7 IGBT
T-MaxTM
®
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G
C
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff
• 100 kHz operation @ 400V, 54A • 50 kHz operation @ 400V, 76A • SSOA rated
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
7
All Ratings: TC = 25°C unless otherwise specified.