APT65GP60JDQ2 Description
TYPICAL PERFORMANCE CURVES ® APT65GP60JDQ2 600V APT65GP60JDQ2 POWER MOS 7 IGBT ® E G C E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. TC = 25°C unless otherwise specified.