APT65GP60JDQ2 datasheet by Advanced Power Technology.
| Part number | APT65GP60JDQ2 |
|---|---|
| Datasheet | APT65GP60JDQ2-AdvancedPowerTechnology.pdf |
| File Size | 498.38 KB |
| Manufacturer | Advanced Power Technology |
| Description | IGBT |
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TYPICAL PERFORMANCE CURVES ® APT65GP60JDQ2 600V APT65GP60JDQ2 POWER MOS 7 IGBT ® E G C E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. TC = 25°C unless otherwise specified.
View all Advanced Power Technology datasheets
| Part Number | Description |
|---|---|
| APT65GP60B2 | IGBT |
| APT65GP60L2DQ2 | IGBT |
| APT65GP60L2DQ2G | IGBT |
| APT6010B2LL | Power MOSFET |
| APT6010JFLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
| APT6010JLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
| APT6010LLL | Power MOSFET |
| APT6011B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6011B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6011LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
