APT65GP60L2DQ2G datasheet by Advanced Power Technology.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | APT65GP60L2DQ2G |
|---|---|
| Datasheet | APT65GP60L2DQ2G APT65GP60L2DQ2 Datasheet (PDF) |
| File Size | 464.24 KB |
| Manufacturer | Advanced Power Technology |
| Description | IGBT |
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POWER MOS 7 IGBT ® TO-264 Max The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff 100 kHz operation @ 400V, 54A 50 kHz operation @ 400V, 76A SSOA Rated G...
View all Advanced Power Technology datasheets
| Part Number | Description |
|---|---|
| APT65GP60L2DQ2 | IGBT |
| APT65GP60B2 | IGBT |
| APT65GP60JDQ2 | IGBT |
| APT6010B2LL | Power MOSFET |
| APT6010JFLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
| APT6010JLL | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
| APT6010LLL | Power MOSFET |
| APT6011B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6011B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6011LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
