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TYPICAL PERFORMANCE CURVES ®
APT65GP60L2DQ2 APT65GP60L2DQ2G*
APT65GP60L2DQ2 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
®
TO-264 Max
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 100 kHz operation @ 400V, 54A • 50 kHz operation @ 400V, 76A • SSOA Rated
G
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
7
All Ratings: TC = 25°C unless otherwise specified.
APT65GP60L2DQ2G Datasheet
