APTC60TAM35P Datasheet | Advanced Power Technology

Features - - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration G2 G4 G6 S2 0/VBUS1 S4 0/VBUS2 S6 0/VBUS3 - - - .. VBUS 1 VBUS 2 VBUS 3 G1 0/VBUS 1 S1 S2 G2 0/VBUS 2 G3 S3 S4 G4 0/VBUS 3 G5 S5 S6 G6 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Very low (12mm) profile - Each leg can be easily paralleled to achieve a phase leg of three times the current capability - Module can be configured as a three phase bridge - Module can be configured as a boost followed by a full bridge Max ratings 600 72 54 200 ±20 35 416 20 1 1800 Unit V A V mΩ W A m J - Rev 0 September, 2004 Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage...