APTC60TDUM35P Datasheet | Advanced Power Technology

Features - - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration D2 D4 D6 - - - D1 D3 D5 .. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://.advancedpower. 1-6 - Rev 0 September, 2004 Benefits - Outstanding performance at high frequency operation S1 S3 S5 S1/S2 S3/S4 S5/S6 - Direct mounting to heatsink (isolated package) S2 S4 S6 - Low junction to case thermal resistance G2 G4 G6 - Solderable terminals both for power and signal for easy PCB mounting D2 D4 D6 - Very low (12mm) profile - Each leg can be easily paralleled to achieve a dual mon source configuration of three times the current capability Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 72 ID Continuous Drain Current A Tc = 80°C 54 IDM Pulsed Drain current 200 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 35 mΩ PD Maximum Power Dissipation Tc = 25°C 416 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 m J EAS Single Pulse Avalanche Energy 1800 G1 G3 G5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 375µA Min 600 VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Typ 1 Max 40 375 35 3.9 ±150 Unit V µA mΩ V n A Tj = 25°C Tj = 125°C...