Advanced Power Technology APTC60TDUM35P
Triple dual Common Source Super Junction MOSFET Power Module
FEATURES
● - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration D2 D4 D6●
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● D1 D3 D5 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – 1-6 APTC60TDUM35P – Rev 0 September, 2004 Benefits
● Outstanding performance at high frequency operation S1 S3 S5 S1/S2 S3/S4 S5/S6
● Direct mounting to heatsink (isolated package) S2 S4 S6
● Low junction to case thermal resistance G2 G4 G6
● Solderable terminals both for power and signal for easy PCB mounting D2 D4 D6
● Very low (12mm) profile
● Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 72 ID Continuous Drain Cu...