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MS1452 - RF & MICROWAVE TRANSISTORS

General Description

The MS1452 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application.

Key Features

  • 800-900 MHz.
  • 24 VOLTS.
  • COMMON.

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Datasheet Details

Part number MS1452
Manufacturer Advanced Power Technology
File Size 137.20 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1452 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALLIZATION • INTERNAL INPUT MATCHING • CLASS AB LINEAR OPERATION • POUT = 30 W MINIMUM • GP = 7.5 dB DESCRIPTION: The MS1452 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application.