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MS1453 - RF & MICROWAVE TRANSISTORS

General Description

The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications.

Key Features

  • 800-900 MHz.
  • 24 VOLTS.
  • COMMON.

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Datasheet Details

Part number MS1453
Manufacturer Advanced Power Technology
File Size 83.82 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1453 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS Features • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALIZATION • INTERNAL INPUT MATCHING • CLASS AB LINEAR OPERATION • POUT = 30 W MIN. WITH 7.5 dB GAIN MS1453 DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCES VEBO IC PDISS TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case Value 50 45 5.0 5.0 43 +200 -65 to +150 3.