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MS1455 - RF & MICROWAVE TRANSISTORS

General Description

The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range.

Internal impedance matching assures optimum gain and efficiency across the entire frequency band.

Key Features

  • 836 MHz.
  • 12.5 VOLTS.
  • POUT = 45 WATTS.
  • GP = 4.7 dB.

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Datasheet Details

Part number MS1455
Manufacturer Advanced Power Technology
File Size 130.26 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1455 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS Features • 836 MHz • 12.5 VOLTS • POUT = 45 WATTS • GP = 4.7 dB MINIMUM • COMMON BASE CONFIGURATION DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability.