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MS1454 Datasheet Rf & Microwave Transistors

Manufacturer: Advanced Power Technology

Overview: 140 MERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS.

General Description

: The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage PDISS Total Power Dissipation IC Collector Current Tj Junction Temperature Tstg Storage Temperature Value 48 25 3.5 88 7.5 +200 -65 to +150 THERMAL DATA RTH(j-c) Ju

Key Features

  • Gold Metallization.
  • Diffused Emitter Ballasting.
  • Internal Input Matching.
  • Designed for Linear Operation.
  • High Saturated Power Capability.
  • Common Emitter Configuration.
  • POUT.
  • Gain 30 W MIN 7.5 dB.
  • Efficiency 55% (Typ).
  • 20:1 VSWR.
  • Overdrive Survivability 5 dB.

MS1454 Distributor