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MS1454 - RF & MICROWAVE TRANSISTORS

General Description

The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications.

Key Features

  • Gold Metallization.
  • Diffused Emitter Ballasting.
  • Internal Input Matching.
  • Designed for Linear Operation.
  • High Saturated Power Capability.
  • Common Emitter Configuration.
  • POUT.
  • Gain 30 W MIN 7.5 dB.
  • Efficiency 55% (Typ).
  • 20:1 VSWR.
  • Overdrive Survivability 5 dB.

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Datasheet Details

Part number MS1454
Manufacturer Advanced Power Technology
File Size 275.89 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1454 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS MS1454 Features • Gold Metallization • Diffused Emitter Ballasting • Internal Input Matching • Designed for Linear Operation • High Saturated Power Capability • Common Emitter Configuration • POUT • Gain 30 W MIN 7.5 dB • Efficiency 55% (Typ) • 20:1 VSWR • Overdrive Survivability 5 dB DESCRIPTION: The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications.