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MS2604 - RF& MICROWAVE TRANSISTORS

Description

The MS2604 is a silicon NPN bipolar transistor designed for pulsed S-Band radar applications.

The MS2604 is capable of operation over a wide range of pulse widths and duty cycles.

Internal impedance matching and gold metalization provide consistent broadband performance and long term reliability.

Features

  • 2.7.
  • 3.1 GHz 40 VOLTS POUT = 25 WATTS GP = 6.2 dB.

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Datasheet preview – MS2604

Datasheet Details

Part number MS2604
Manufacturer Advanced Power Technology
File Size 146.55 KB
Description RF& MICROWAVE TRANSISTORS
Datasheet download datasheet MS2604 Datasheet
Additional preview pages of the MS2604 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com MS2604 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS Features • • • • • • 2.7 – 3.1 GHz 40 VOLTS POUT = 25 WATTS GP = 6.2 dB MINIMUM GOLD METALLIZATION INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION • DESCRIPTION: The MS2604 is a silicon NPN bipolar transistor designed for pulsed S-Band radar applications. The MS2604 is capable of operation over a wide range of pulse widths and duty cycles. Internal impedance matching and gold metalization provide consistent broadband performance and long term reliability.
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