Datasheet4U Logo Datasheet4U.com

VRF151 - N-CHANNEL RF POWER VERTICAL MOSFET

General Description

The VRF151 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and intermodulation distortion.

1.

DRAIN 2.

Key Features

  • 150W WITH 14dB.

📥 Download Datasheet

Datasheet Details

Part number VRF151
Manufacturer Advanced Power Technology
File Size 210.94 KB
Description N-CHANNEL RF POWER VERTICAL MOSFET
Datasheet download datasheet VRF151 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VRF152 RF POWER VERTICAL MOSFET Microsemi
VRF152MP RF POWER VERTICAL MOSFET Microsemi
VRF154FL RF Power Vertical MOSFET Microsemi
VRF157FL RF POWER VERTICAL MOSFET Microsemi
VRF157FLMP RF POWER VERTICAL MOSFET Microsemi

Other Datasheets by Advanced Power Technology

Part Number Description
VRF150 N-CHANNEL RF POWER VERTICAL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
150W, 50V, 175MHz N-CHANNEL RF POWER VERTICAL MOSFET PRELIMINARY INFORMATION VRF151 BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V • 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V www.DataSheet4U.com • EXCELLENT STABILITY & LOW IMD • COMMON SOURCE CONFIGURATION • 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS • NITRIDE PASSIVATED • REFRACTORY GOLD METALLIZATION DESCRIPTION: The VRF151 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and intermodulation distortion. 1. DRAIN 2. SOURCE 3. GATE 4.