VRF151
Description
The VRF151 is a gold metallized silicon, n-channel RF power transistor designed for broadband mercial and military applications requiring high power and gain without promising reliability, ruggedness, and intermodulation distortion. SOURCE Symbol V(BR)DSS VDGO VGS ID PDISS TJ T STG Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Power Dissipation Max Operating Junction Temperature Storage Temperature Value 125 125 ±40 16 300 +200 -65 to +150 Unit V V V A W °C °C Thermal Data Rè(J-C) VRF151.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at .ADVANCEDPOWER.
Key Features
- 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V
- 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V
- EXCELLENT STABILITY & LOW IMD
- MON SOURCE CONFIGURATION
- 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
- NITRIDE PASSIVATED
- REFRACTORY GOLD METALLIZATION
