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VRF157FL - RF POWER VERTICAL MOSFET

Key Features

  • Improved Ruggedness V(BR)DSS = 170V.
  • 600W with 21dB Typical Gain @ 30MHz, 50V.
  • Excellent Stability & Low IMD.
  • Common Source Configuration.
  • Available in Matched Pairs.
  • Nitride Passivated.
  • Economical Flangeless Package.
  • Refractory Gold Metallization.
  • High Voltage Replacement for MRF157.
  • RoHS Compliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC =.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VRF157FL VRF157FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.