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VRF152 - RF POWER VERTICAL MOSFET

Key Features

  • Improved Ruggedness V(BR)DSS = 130V.
  • 150W with 22dB Typical Gain @ 30MHz, 50V.
  • 150W with 14dB Typical Gain @ 175MHz, 50V.
  • Excellent Stability & Low IMD.
  • Common Source Configuration.
  • Available in Matched Pairs.
  • 70:1 Load VSWR Capability at Specified Operating Conditions.
  • Nitride Passivated.
  • Refractory Gold Metallization.
  • Low Rds Replacement for MRF151/ BLF177/ SD2941.
  • RoHS Compliant Maximu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.