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VRF157FLMP - RF POWER VERTICAL MOSFET

Download the VRF157FLMP datasheet PDF. This datasheet also covers the VRF157FL variant, as both devices belong to the same rf power vertical mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Improved Ruggedness V(BR)DSS = 170V.
  • 600W with 21dB Typical Gain @ 30MHz, 50V.
  • Excellent Stability & Low IMD.
  • Common Source Configuration.
  • Available in Matched Pairs.
  • Nitride Passivated.
  • Economical Flangeless Package.
  • Refractory Gold Metallization.
  • High Voltage Replacement for MRF157.
  • RoHS Compliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VRF157FL-Microsemi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VRF157FL VRF157FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.