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VRF157FLMP - RF POWER VERTICAL MOSFET

This page provides the datasheet information for the VRF157FLMP, a member of the VRF157FL RF POWER VERTICAL MOSFET family.

Datasheet Summary

Features

  • Improved Ruggedness V(BR)DSS = 170V.
  • 600W with 21dB Typical Gain @ 30MHz, 50V.
  • Excellent Stability & Low IMD.
  • Common Source Configuration.
  • Available in Matched Pairs.
  • Nitride Passivated.
  • Economical Flangeless Package.
  • Refractory Gold Metallization.
  • High Voltage Replacement for MRF157.
  • RoHS Compliant Maximum Ratings Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC =.

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Datasheet preview – VRF157FLMP

Datasheet Details

Part number VRF157FLMP
Manufacturer Microsemi
File Size 135.94 KB
Description RF POWER VERTICAL MOSFET
Datasheet download datasheet VRF157FLMP Datasheet
Additional preview pages of the VRF157FLMP datasheet.

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Full PDF Text Transcription

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VRF157FL VRF157FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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