Microsemi VRF157FLMP
The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.| Part No. | VRF157FLMP |
|---|---|
| Datasheet | VRF157FLMP Download |
| Manufacturer |  Microsemi |
| Description | RF POWER VERTICAL MOSFET |
| Buy | Stock & Price |
FEATURES
● Improved Ruggedness V(BR)DSS = 170V● 600W with 21dB Typical Gain @ 30MHz, 50V
● Excellent Stability & Low IMD
● Common Source Configuration
● Available in Matched Pairs
● Nitride Passivated
● Economical Flangeless Package
● Refractory Gold Metallization
● High Voltage Replacement for MRF157
● RoHS Compliant
MAXIMUM RATINGS
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature Max All Ratings: TC =25°C unless otherwise specified VRF157FL(MP) 170 60 ±40 1350 -65 to 150 200 Unit V A V W °C StaticELECTRICAL CHARACTERISTICS
Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 40A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID =...
