Datasheet4U Logo Datasheet4U.com

CBSL15 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI CBSL15 is Designed for .040x45° C B 2XØ.130 PACKAGE STYLE .230 6L FLG A 4X .025 R .115 .430 D E .125 G H I J K L F

Key Features

  • Omnigold™ Metalization System.

📥 Download Datasheet

Datasheet Details

Part number CBSL15
Manufacturer Advanced Semiconductor
File Size 18.10 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet CBSL15 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CBS05F30 Schottky Barrier Diode Toshiba Semiconductor
CBS084A00-TJN LCM MODULE AV-DISPLAY
CBS10S30 Schottky Barrier Diode Toshiba

Other Datasheets by Advanced Semiconductor

Part Number Description
CBSL150 NPN SILICON RF POWER TRANSISTOR
CBSL1 NPN SILICON RF POWER TRANSISTOR
CBSL100 NPN SILICON RF POWER TRANSISTOR
CBSL30 NPN SILICON RF POWER TRANSISTOR
CBSL30B NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL15 is Designed for .040x45° C B 2XØ.130 PACKAGE STYLE .230 6L FLG A 4X .025 R .115 .430 D E .125 G H I J K L F FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 2.5 A 48 V 30 V 4.0 V 29 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 6.0 OC/W O O O DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84 .365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.