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CBSL150 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers.

Key Features

  • Internal Input/Output Matching.
  • PG = 9.0 dB Typ. at 150 W/ 900 MHz.
  • Omnigold™ Metalization System E D C .1925 F H I N L J DIM A.

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Datasheet Details

Part number CBSL150
Manufacturer Advanced Semiconductor
File Size 18.31 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet CBSL150 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG (C) FEATURES: • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz • Omnigold™ Metalization System E D C .1925 F H I N L J DIM A MINIMUM inches / mm .080x45° A B FULL R (4X).060 R M G MAXIMUM RATINGS IC VCEO VCES VEBO PDISS TJ TSTG θ JC 25 A 28 V 60 V 3.5 V 300 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 0.6 OC/W O .220 / 5.59 .210 / 5.33 .120 / 3.05 .380 / 9.65 .780 / 19.81 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .082 / 2.08 K MAXIMUM inches / mm .230 / 5.84 B C D E F G H I J K L M N .395 / 10.03 .850 / 21.59 .130 / 3.30 .390 / 9.91 .820 / 20.83 1.345 / 34.16 .