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CBSL1 - NPN SILICON RF POWER TRANSISTOR

Description

The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment.

Features

  • Pg = 10 dB min. @ 960 MHz.
  • P1dB = 1.0 Watts min. at 960 MHz.
  • Omnigold™ Metalization System B C E B D C J E I E.

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Datasheet preview – CBSL1

Datasheet Details

Part number CBSL1
Manufacturer Advanced Semiconductor
File Size 18.69 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet CBSL1 Datasheet
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Full PDF Text Transcription

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CBSL1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. PACKAGE STYLE .280 4L STUD A 45° FEATURES: • Pg = 10 dB min. @ 960 MHz • P1dB = 1.0 Watts min. at 960 MHz • Omnigold™ Metalization System B C E B D C J E I E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.25 A 40 V 28 V 3.5 V 7.0 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 25 C/W TC = 25 C O DIM A B C D E F G H I J K F G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 O .255 / 6.48 .217 / 5.51 .285 / 7.
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