MSC85623
MSC85623 is NPN RF TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI MSC85623 is a Silicon NPN Microwave Transistor Supplied in a mon Base Package, Designed for RF Amplifier and Oscillator Applications up to 3.0 GHz.
PACKAGE 230 2L FLG
MAXIMUM RATINGS
IC VCEO VCB VEB PDISS TJ
..
150 m A 14 V 40 V 3.5 V 25 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 7.0 C/W
O O O O O O
TSTG θJC
1 = Collector 2 = Emitter 3 = Base
TRANS1.SYM
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVCBO BVEBO ICBO PG ηC IC = 5.0 m A IC = 5.0 m A IC = 5.0 m A IE = 1.0 m A VCB = 21 V VCC = 28 V
TC = 25 C
TEST CONDITIONS
RBE = 510 Ω
MINIMUM
14 30 40 3.5
TYPICAL
MAXIMUM
UNITS
2.0 Pout = 5.0 W f = 3.0 GHz 5.5 30 m A d B %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1202
- FAX (818) 765-3004
Specifications are subject to change without notice.
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