VHB1-28T
VHB1-28T is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI VHB1-28T is Designed for
PACKAGE STYLE TO-39
B ØA 45° C
FEATURES
:
- -
- Omnigold™ Metalization System
ØD E
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
0.4 A 55 V 30 V 3.5 V 5 W @ TC = 25 C -65 C to +200 C -65 OC to +200 OC 35 OC/W
DIM A B C D E F G H .016 / 0.407 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .500 / 12.700 .020 / 0.508 MINIMUM inches / mm
MAXIMUM inches / mm
.200 / 5.080 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600
ORDER CODE: ASI10720
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVCBO BVEBO ICEX ICEO VCE
(S)
TC = 25 C
NONETEST CONDITIONS
IC = 5.0 m A IC = 5.0 m A IC = 0.1 m A IE = 0.1 m A VC = 55 V VE = 28 V IC = 100 m A VCE = 5.0 V IB = 20 m A IC = 50 m A IC = 360 m A f = 1.0 MHz POUT = 1.0 W f = 175 MHz VBE = -1.5 V RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
30 55 55 3.5 100 20 1.0 10 5.0 200
UNITS
V V V V µA µA V --p F d B h FE COB PG η
VCB = 28 V VCE = 28 V
3.0 13 60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA...
