VHB1-28T Datasheet PDF | Advanced Semiconductor

Advanced Semiconductor VHB1-28T

VHB1-28T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES: • • • Omnigold™ Metalization System ØD E F MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O G H 0.4 A 55 V 30 V 3.5 V 5 W @ TC = 25 C -65 C to +200 C -65 OC to +200 OC 35 OC/W O O DIM A B C D E F G H .016 / 0.407 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .500 / 12.700 .020 / 0.508 MINIMUM inches / mm MAXIMUM inches / mm .200 / 5.080 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600 ORDER CODE: ASI10720 CHARACTERISTICS SYMBOL BVCEO BVCER BVCBO BVEBO ICEX ICEO VCE (S) TC = 25 C O...

Part No.	VHB1-28T
Datasheet	VHB1-28T Download
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Buy	Stock & Price

DESCRIPTION

: The ASI VHB1-28T is Designed for PACKAGE STYLE TO-39 B ØA 45° C

FEATURES

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● Omnigold™ Metalization System ØD E F

MAXIMUM RATINGS

IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O G H 0.4 A 55 V 30 V 3.5 V 5 W @ TC = 25 C -65 C to +200 C -65 OC to +200 OC 35 OC/W O O DIM A B C D E F G H .016 / 0.407 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .500 / 12.700 .020 / 0.508 MINIMUM inches / mm MAXIMUM inches / mm .200 / 5.080 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600 ORDER CODE: ASI10720 CHARACTERISTICS SYMBOL BVCEO BVCER BVCBO BVEBO ICEX ICEO VCE (S) TC = 25 C O NONETEST CONDITIONS IC = 5.0 mA IC = 5.0 mA IC = 0.1 mA IE = 0.1 mA VC = 55 V VE = 28 V IC = 100 mA VCE = 5.0 V IB = 20 mA IC = 50 mA IC = 360 mA f = 1.0 MHz POUT = 1.0 W f = 175 MHz VBE = -1.5 V RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 30 55 55 3.5 100 20 1.0 10 5.0 200 UNITS V V V V µA µA V --pF dB hFE COB PG η VCB = 28 V VCE = 28 V 3.0 13 60 % A D V A N C E D S E M I C O N D U C T O R, I N C.