AP30G40AEO Description
Advanced Power Electronics Corp. @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Units +30 uA 10 uA 6V 1.2 V 91.2 nC - nC - nC - ns - us - ns - us - pF - pF - pF 125 oC/W Notes:.
- Part: AP30G40AEO
- Manufacturer: Advanced Power Electronics Corp (official site)
- Size: 57.14 KB
Related Advanced Power Electronics Corp Datasheets
| Part Number | Description |
|---|---|
| AP30G40GEO-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G100W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G120BSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |