AP30G40GEO-HF Description
Advanced Power Electronics Corp. +30 10 9 1.2 96 125 Units uA uA V V nC nC nC ns ns ns ns pF pF pF oC/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
AP30G40GEO-HF is N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp .
| Part Number | Description |
|---|---|
| AP30G40AEO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G100W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| AP30G120ASW-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP30G120BSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
Advanced Power Electronics Corp. +30 10 9 1.2 96 125 Units uA uA V V nC nC nC ns ns ns ns pF pF pF oC/W Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.