AT-41470 Datasheet | Agilent(Hewlett-Packard)

Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data Features - Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz - High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz - High Gain-Bandwidth Product: 8.0 GHz Typical fT - Hermetic, Gold-ceramic Microstrip Package finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω at 1 GHz , makes this device...