AFN1055S Description
AFN1055S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-220-3L.
AFN1055S Key Features
- 100V/40A,RDS(ON)=6.0mΩ@VGS=10V
- 100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V
- Super high density cell design for extremely low
- TO-220-3L package design
- Power Supply
- Secondary Synchronous Rectification
- Industrial
- Primary Switch