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AFN1055S Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology AFN1055S 100V N-Channel Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN1055S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TO-220-3L )

Key Features

  • 100V/40A,RDS(ON)=6.0mΩ@VGS=10V.
  • 100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TO-220-3L package design.

AFN1055S Distributor