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AFN1072E Datasheet N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN1072E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-723 ) AFN1072E 20V N-Channel Enhancement Mode MOSFET

Key Features

  • 20V/0.8A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.7A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.6A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-723 package design.

More Datasheets from Alfa-MOS

Part Number Description
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AFN1024E N-Channel MOSFET
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AFN1032 N-Channel MOSFET
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AFN1072E Distributor