AFN10A60D
AFN10A60D is N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN10A60D-Alfa comparator family.
- Part of the AFN10A60D-Alfa comparator family.
Description
AFN10A60D is an N-channel enhancement mode Power MOSFET which is produced using VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
Pin Description
SYMBOL
Features
600V/5A,RDS(ON)=0.58Ω(typ.)@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
Application
AC-DC Switching Power Supply
LCD / LED / PDP TV Lighting Solar Inverter
TO-220F-3L
Absolute Maximum Ratings (Tc=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate
- Source Voltage
Drain Current
DC Pluse
Single Pulsed Avalanche Energy
L=6.36m H, IAS=10A, VDD=90V, RG=25Ω,...
