AFN10A60D - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN10A60D, a member of the AFN10A60D-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN10A60D is an N-channel enhancement mode Power MOSFET which is produced using VDMOS technology.

Features

600V/5A,RDS(ON)=0.58Ω(typ. )@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

Alfa-MOS

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Datasheet Details

Part number	AFN10A60D
Manufacturer	Alfa-MOS
File Size	498.43 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN10A60D Datasheet
Additional preview pages of the AFN10A60D datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN10A60D 600V / 10A N-Channel Enhancement Mode MOSFET General Description AFN10A60D is an N-channel enhancement mode Power MOSFET which is produced using VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Pin Description SYMBOL Features 600V/5A,RDS(ON)=0.58Ω(typ.

Published: Nov 30, 2018 |