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AFN1123WS - 100V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN1123WS, a member of the AFN1123WS-Alfa 100V N-Channel Enhancement Mode MOSFET family.

Description

AFN1123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 100V/3.6A,RDS(ON)=125mΩ@VGS=10V.
  • 100V/2.8A,RDS(ON)=150mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-323 package design.

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Datasheet Details

Part number AFN1123WS
Manufacturer Alfa-MOS
File Size 796.80 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1123WS Datasheet
Additional preview pages of the AFN1123WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN1123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-323 ) AFN1123WS 100V N-Channel Enhancement Mode MOSFET Features  100V/3.6A,RDS(ON)=125mΩ@VGS=10V  100V/2.8A,RDS(ON)=150mΩ@VGS=4.
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