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AFN1123WS Datasheet 100V N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN1123WS datasheet PDF. This datasheet also includes the AFN1123WS-Alfa variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AFN1123WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1123WS
Manufacturer Alfa-MOS
File Size 796.80 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1123WS Datasheet

General Description

AFN1123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( SOT-323 ) AFN1123WS 100V N-Channel Enhancement Mode MOSFET

Overview

Alfa-MOS Technology General.

Key Features

  • 100V/3.6A,RDS(ON)=125mΩ@VGS=10V.
  • 100V/2.8A,RDS(ON)=150mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-323 package design.

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