AFN1123WS Datasheet | Alfa-MOS

Description AFN1123WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-323 ) 100V N-Channel Enhancement Mode MOSFET Features - 100V/3.6A,RDS(ON)=125mΩ@VGS=10V - 100V/2.8A,RDS(ON)=150mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-323 package design Application - Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. - High saturation current capability. Direct Logic-Level Interface: TTL/CMOS - Battery Operated Systems - Solid-State Relays Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFN1123WSS32RG 23YW SOT-323 ※ 23 Parts code ※ Y Year code ( 0 ~ 9 ) ※ M Month code ( A ~ L = 1 ~ 12 ) ※ AFN1123WSS32RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.A Dec. 2024 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 100V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise...