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AFN2354 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2354, a member of the AFN2354-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2354, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 100V/3.2A,RDS(ON)=145mΩ@VGS=10V 100V/2.6A,RDS(ON)=160mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Datasheet Details

Part number AFN2354
Manufacturer Alfa-MOS
File Size 551.64 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2354 Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2354, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFN2354 100V N-Channel Enhancement Mode MOSFET Features 100V/3.2A,RDS(ON)=145mΩ@VGS=10V 100V/2.6A,RDS(ON)=160mΩ@VGS=4.
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