Datasheet4U Logo Datasheet4U.com

AFN2356AS Datasheet 100V N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN2356AS datasheet PDF. This datasheet also includes the AFN2356AS-Alfa variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN2356AS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN2356AS
Manufacturer Alfa-MOS
File Size 822.64 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2356AS Datasheet

General Description

AFN2356AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( SOT-23 ) AFN2356AS 100V N-Channel Enhancement Mode MOSFET

Overview

Alfa-MOS Technology General.

Key Features

  • 100V/3.6A,RDS(ON)=100mΩ@VGS=10V.
  • 100V/2.8A,RDS(ON)=125mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.