Alfa-MOS AFN2356AS
100V N-Channel Enhancement Mode MOSFET
| Part No. | AFN2356AS |
|---|---|
| Datasheet | AFN2356AS Download |
| Manufacturer |  Alfa-MOS |
| Description | 100V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN2356AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23 ) AFN2356AS 100V N-Channel Enhancement Mode MOSFETFEATURES
● 100V/3.6A,RDS(ON)=100mΩ@VGS=10V● 100V/2.8A,RDS(ON)=125mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23 package design Application
● DC/DC Converters
● Load Switch
● LED Backlighting in LCD TVs Pin Define Pin 1 2 3 Symbol G S D
DESCRIPTION
Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFN2356ASS23RG 56YW SOT-23 ※ 56 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN2356ASS23RG : 7” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp.
