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AFN2356AS - 100V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2356AS, a member of the AFN2356AS-Alfa 100V N-Channel Enhancement Mode MOSFET family.

Description

AFN2356AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 100V/3.6A,RDS(ON)=100mΩ@VGS=10V.
  • 100V/2.8A,RDS(ON)=125mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

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Datasheet Details

Part number AFN2356AS
Manufacturer Alfa-MOS
File Size 822.64 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2356AS Datasheet
Additional preview pages of the AFN2356AS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN2356AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN2356AS 100V N-Channel Enhancement Mode MOSFET Features  100V/3.6A,RDS(ON)=100mΩ@VGS=10V  100V/2.8A,RDS(ON)=125mΩ@VGS=4.
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