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AFN2604 - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN2604, a member of the AFN2604-Alfa N-Channel Enhancement Mode MOSFET family.

Description

AFN2604, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 40V/20A,RDS(ON)= 22mΩ@VGS=10V 40V/12A,RDS(ON)= 40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Datasheet Details

Part number AFN2604
Manufacturer Alfa-MOS
File Size 832.32 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN2604 Datasheet
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Alfa-MOS Technology General Description AFN2604, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN2604 40V N-Channel Enhancement Mode MOSFET Features 40V/20A,RDS(ON)= 22mΩ@VGS=10V 40V/12A,RDS(ON)= 40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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