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AFN2604 Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN2604, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TO-252-2L ) AFN2604 40V N-Channel Enhancement Mode MOSFET

Key Features

  • 40V/20A,RDS(ON)= 22mΩ@VGS=10V 40V/12A,RDS(ON)= 40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

AFN2604 Distributor