AFN3030 Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN3030 datasheet PDF. This datasheet also includes the AFN3030-Alfa variant, as both parts are published together in a single manufacturer document.

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AFN3030 n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN3030-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN3030
Manufacturer	Alfa-MOS
File Size	833.27 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN3030 Datasheet

General Description

AFN3030, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( TO-252-2L ) AFN3030 30V N-Channel Enhancement Mode MOSFET

Overview

Alfa-MOS Technology General.

Key Features

30V/12A,RDS(ON)= 30mΩ@VGS=10V 30V/10A,RDS(ON)= 40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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