AFN3112W Datasheet 100V N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN3112W datasheet PDF. This datasheet also includes the AFN3112W-Alfa variant, as both parts are published together in a single manufacturer document.

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AFN3112W 100v n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN3112W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN3112W
Manufacturer	Alfa-MOS
File Size	845.93 KB
Description	100V N-Channel Enhancement Mode MOSFET
Datasheet	AFN3112W Datasheet

General Description

AFN3112W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Overview

Alfa-MOS Technology AFN3112W 100V N-Channel Enhancement Mode MOSFET.

Key Features

ID=3.6A,RDS(ON)=105mΩ@VGS=10V.
ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
DFN2X2-6L package design Pin.

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