AFN3112W Datasheet | Alfa-MOS

Description AFN3112W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Features - ID=3.6A,RDS(ON)=105mΩ@VGS=10V - ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - DFN2X2-6L package design Pin Description ( DFN2X2-6L ) Application - Load Switch with Low Voltage Drop - Load Switch for 1.2 V/1.5 V/1.8 V Power Lines - Smart Phones, Tablet PCs, Portable Media Players Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source1 Gate1 Drain2 Source2 Gate2 Drain1 Ordering Information Part Ordering No. Part Marking Package AFN3112WFN226RG 311YW DFN2X2-6L ※ 311 parts code ※Y year code ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN3112WFN226RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Dec. 2024 Unit Tape & Reel Quantity 4000 EA .alfa-mos. Page 1 Alfa-MOS Technology 100V N-Channel Enhancement Mode MOSFET ※ Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter...