AFN3112W Description
AFN3112W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
AFN3112W Key Features
- ID=3.6A,RDS(ON)=105mΩ@VGS=10V
- ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current
- DFN2X2-6L package design
- Load Switch with Low Voltage Drop
- Load Switch for 1.2 V/1.5 V/1.8 V Power Lines
- Smart Phones, Tablet PCs, Portable Media Players