AFN3112W - 100V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN3112W, a member of the AFN3112W-Alfa 100V N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN3112W
Manufacturer	Alfa-MOS
File Size	845.93 KB
Description	100V N-Channel Enhancement Mode MOSFET
Datasheet	AFN3112W Datasheet
Additional preview pages of the AFN3112W datasheet.

AFN3112W Product details

Description

AFN3112W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

ID=3.6A,RDS(ON)=105mΩ@VGS=10V.
ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
DFN2X2-6L package design Pin.

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Published: Jan 16, 2025 |