AFN3806W Datasheet | Alfa-MOS

Description AFN3806W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) 20V N-Channel Enhancement Mode MOSFET Features - 20V/ 9A,RDS(ON)=26mΩ@VGS=4.5V - 20V/ 8A,RDS(ON)=32mΩ@VGS=2.5V - 20V/ 6A,RDS(ON)=42mΩ@VGS=1.8V - Super high density cell design for extremely low RDS (ON) - DFN3X3-8L package design Application - Load Switch - Portable Equipment - Battery Powered System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D1/D2 D1/D2 D1/D2 D1/D2 Description Source 1 Gate 1 Source 2 Gate 2 Drain 1 / Drain 2 Drain 1 / Drain 2 Drain 1 / Drain 2 Drain 1 / Drain 2 Ordering Information Part Ordering No. Part Marking Package AFN3806WFN338RG 3806W DFN3X3-8L ※ YY year...