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AFN3806W - N-Channel MOSFET

This page provides the datasheet information for the AFN3806W, a member of the AFN3806W-Alfa N-Channel MOSFET family.

Description

AFN3806W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 20V/ 9A,RDS(ON)=26mΩ@VGS=4.5V.
  • 20V/ 8A,RDS(ON)=32mΩ@VGS=2.5V.
  • 20V/ 6A,RDS(ON)=42mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • DFN3X3-8L package design.

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Datasheet preview – AFN3806W

Datasheet Details

Part number AFN3806W
Manufacturer Alfa-MOS
File Size 361.92 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN3806W Datasheet
Additional preview pages of the AFN3806W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN3806W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFN3806W 20V N-Channel Enhancement Mode MOSFET Features  20V/ 9A,RDS(ON)=26mΩ@VGS=4.5V  20V/ 8A,RDS(ON)=32mΩ@VGS=2.5V  20V/ 6A,RDS(ON)=42mΩ@VGS=1.
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