AFN3806W Description
AFN3806W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFN3806W 20V N-Channel Enhancement Mode MOSFET.
AFN3806W Key Features
- 20V/ 9A,RDS(ON)=26mΩ@VGS=4.5V
- 20V/ 8A,RDS(ON)=32mΩ@VGS=2.5V
- 20V/ 6A,RDS(ON)=42mΩ@VGS=1.8V
- Super high density cell design for extremely
- DFN3X3-8L package design
- Load Switch
- Portable Equipment
- Battery Powered System