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AFN3806W Datasheet N-Channel MOSFET

Manufacturer: Alfa-MOS

Download the AFN3806W datasheet PDF. This datasheet also includes the AFN3806W-Alfa variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AFN3806W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN3806W
Manufacturer Alfa-MOS
File Size 361.92 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN3806W Datasheet

General Description

AFN3806W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( DFN3X3-8L ) AFN3806W 20V N-Channel Enhancement Mode MOSFET

Overview

Alfa-MOS Technology General.

Key Features

  • 20V/ 9A,RDS(ON)=26mΩ@VGS=4.5V.
  • 20V/ 8A,RDS(ON)=32mΩ@VGS=2.5V.
  • 20V/ 6A,RDS(ON)=42mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • DFN3X3-8L package design.