AFN3814W Datasheet | Alfa-MOS

Description AFN3814W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) 20V N-Channel Enhancement Mode MOSFET Features 20V/ 14A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 12A,RDS(ON)=18mΩ@VGS=2.5V 20V/ 10A,RDS(ON)=30mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) DFN3X3-8L package design Application Load Switch Portable Equipment Battery Powered System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D1/D2 D1/D2 D1/D2 D1/D2 Description Source 1 Gate 1 Source 2 Gate 2 Drain 1 / Drain 2 Drain 1 / Drain 2 Drain 1 / Drain 2 Drain 1 / Drain 2 Ordering Information Part Ordering No. Part Marking Package AFN3814WFN338RG 3814W DFN3X3-8L ϡʳ YY ϡʳ MM ϡʳ DD year code month...