Download the AFN4896W datasheet PDF.
This datasheet also covers the AFN4896W-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
AFN4896W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Key Features
100V/6.8A,RDS(ON)=115mΩ@VGS=10V 100V/5.6A,RDS(ON)=125mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.
Full PDF Text Transcription for AFN4896W (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AFN4896W. For precise diagrams, and layout, please refer to the original PDF.
Alfa-MOS Technology General Description AFN4896W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These ...
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rench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4896W 100V N-Channel Enhancement Mode MOSFET Features 100V/6.8A,RDS(ON)=115mΩ@VGS=10V 100V/5.6A,RDS(ON)=125mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Par
AFN4896W Datasheet
