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AFN4896W - N-Channel MOSFET

This page provides the datasheet information for the AFN4896W, a member of the AFN4896W-Alfa N-Channel MOSFET family.

Description

AFN4896W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/6.8A,RDS(ON)=115mΩ@VGS=10V 100V/5.6A,RDS(ON)=125mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet Details

Part number AFN4896W
Manufacturer Alfa-MOS
File Size 581.75 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4896W Datasheet
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Alfa-MOS Technology General Description AFN4896W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4896W 100V N-Channel Enhancement Mode MOSFET Features 100V/6.8A,RDS(ON)=115mΩ@VGS=10V 100V/5.6A,RDS(ON)=125mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.
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