AFN4896W Datasheet | Alfa-MOS

Description AFN4896W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 100V N-Channel Enhancement Mode MOSFET Features 100V/6.8A,RDS(ON)=115mΩ@VGS=10V 100V/5.6A,RDS(ON)=125mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No. Part Marking Package AFN4896WS8RG 4896W SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4896WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev. A June 2014 Description Source Source Source Gate...