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AFN4936WS - N-Channel MOSFET

This page provides the datasheet information for the AFN4936WS, a member of the AFN4936WS-Alfa N-Channel MOSFET family.

Description

AFN4936WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 30V/5.0A,RDS(ON)=24mΩ@VGS=10V 30V/4.7A,RDS(ON)=38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

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Datasheet Details

Part number AFN4936WS
Manufacturer Alfa-MOS
File Size 463.96 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4936WS Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN4936WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4936WS 30V N-Channel Enhancement Mode MOSFET Features 30V/5.0A,RDS(ON)=24mΩ@VGS=10V 30V/4.7A,RDS(ON)=38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Low Current DC/DC Conversion Load Switch CCFL Inverter Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No.
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