AFN6095S Datasheet | Alfa-MOS

Alfa-MOS Technology 60V N-Channel Enhancement Mode MOSFET General Description AFN6095S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Features 60V/40A,RDS(ON)= 7.8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.8mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design Pin Description ( TO-262 ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part...