AFN6003S Datasheet | Alfa-MOS

Alfa-MOS Technology 60V N-Channel Enhancement Mode MOSFET General Description AFN6003S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-220-3L ) Features 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part...