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AFN6003S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN6003S, a member of the AFN6003S-Alfa N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

AFN6003S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-220-3L package design.

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Datasheet Details

Part number AFN6003S
Manufacturer Alfa-MOS
File Size 379.96 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN6003S Datasheet
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Alfa-MOS Technology AFN6003S 60V N-Channel Enhancement Mode MOSFET General Description AFN6003S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) Features 60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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