AFN6035S Description
AFN6035S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
AFN6035S Key Features
- 60V/40A,RDS(ON)= 4.5mΩ@VGS=10V
- 60V/30A,RDS(ON)= 5.5mΩ@VGS=6.0V
- 60V/20A,RDS(ON)= 7.2mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS
- TO-220-3L package design
- Synchronous Rectifier
- Power Supplies