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AFN6035S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN6035S, a member of the AFN6035S-Alfa N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

AFN6035S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 60V/40A,RDS(ON)= 4.5mΩ@VGS=10V.
  • 60V/30A,RDS(ON)= 5.5mΩ@VGS=6.0V.
  • 60V/20A,RDS(ON)= 7.2mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TO-220-3L package design Pin.

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Datasheet Details

Part number AFN6035S
Manufacturer Alfa-MOS
File Size 650.68 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN6035S Datasheet
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Alfa-MOS Technology AFN6035S 60V N-Channel Enhancement Mode MOSFET General Description AFN6035S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features  60V/40A,RDS(ON)= 4.5mΩ@VGS=10V  60V/30A,RDS(ON)= 5.5mΩ@VGS=6.0V  60V/20A,RDS(ON)= 7.2mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  TO-220-3L package design Pin Description ( TO-220-3L ) Application  Synchronous Rectifier  Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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