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AFN6011S - N-Channel Enhancement Mode MOSFET

Download the AFN6011S datasheet PDF. This datasheet also covers the AFN6011S-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN6011S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 65V/40A, RDS(on)= 7.8mΩ@VGS=10V 65V/20A, RDS(on)=10mΩ@VGS=6.0V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN6011S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN6011S
Manufacturer Alfa-MOS
File Size 551.09 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN6011S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN6011S 65V N-Channel Enhancement Mode MOSFET General Description AFN6011S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 65V/40A, RDS(on)= 7.8mΩ@VGS=10V 65V/20A, RDS(on)=10mΩ@VGS=6.0V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin Description ( TO-220-3L ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.