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AFN6011S - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN6011S, a member of the AFN6011S-Alfa N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

AFN6011S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 65V/40A, RDS(on)= 7.8mΩ@VGS=10V 65V/20A, RDS(on)=10mΩ@VGS=6.0V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin.

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Datasheet Details

Part number AFN6011S
Manufacturer Alfa-MOS
File Size 551.09 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN6011S Datasheet
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Alfa-MOS Technology AFN6011S 65V N-Channel Enhancement Mode MOSFET General Description AFN6011S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 65V/40A, RDS(on)= 7.8mΩ@VGS=10V 65V/20A, RDS(on)=10mΩ@VGS=6.0V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin Description ( TO-220-3L ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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