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AFP1913 - P-Channel MOSFET

This page provides the datasheet information for the AFP1913, a member of the AFP1913-Alfa P-Channel MOSFET family.

Description

AFP1913, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • z -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 800 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 1600 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage Operation z High-Speed Circuits z Low Battery Voltage Operation z SOT-363 package design.

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Datasheet preview – AFP1913

Datasheet Details

Part number AFP1913
Manufacturer Alfa-MOS
File Size 506.19 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1913 Datasheet
Additional preview pages of the AFP1913 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP1913, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFP1913 20V P-Channel Enhancement Mode MOSFET Features z -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 800 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 1600 mΩ@ VGS =-1.
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