AFP1913E Datasheet | Alfa-MOS

Description AFP1913E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-363 ) 20V P-Channel Enhancement Mode MOSFET Features z -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage Operation z High-Speed Circuits z Low Battery Voltage Operation z ESD Protection Diode design- in z SOT-363 package design Application z Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Load/Power Switching Smart Phones, Pagers z PA Switch z Level Switch Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description So...