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AFP1913E - P-Channel MOSFET

This page provides the datasheet information for the AFP1913E, a member of the AFP1913E-Alfa P-Channel MOSFET family.

Description

AFP1913E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • z -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage Operation z High-Speed Circuits z Low Battery Voltage Operation z ESD Protection Diode design.
  • in z SOT-363 package design.

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Datasheet preview – AFP1913E

Datasheet Details

Part number AFP1913E
Manufacturer Alfa-MOS
File Size 504.80 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1913E Datasheet
Additional preview pages of the AFP1913E datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP1913E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFP1913E 20V P-Channel Enhancement Mode MOSFET Features z -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.
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