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AFP1913E Datasheet P-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP1913E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-363 ) AFP1913E 20V P-Channel Enhancement Mode MOSFET

Key Features

  • z -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage Operation z High-Speed Circuits z Low Battery Voltage Operation z ESD Protection Diode design.
  • in z SOT-363 package design.

More Datasheets from Alfa-MOS

Part Number Description
AFP1913 P-Channel MOSFET
AFP1933 P-Channel MOSFET
AFP1013 P-Channel MOSFET
AFP1013E P-Channel MOSFET
AFP1023 P-Channel MOSFET
AFP1023E P-Channel MOSFET
AFP1033 P-Channel MOSFET
AFP1033E P-Channel MOSFET
AFP1073 P-Channel MOSFET
AFP1073E P-Channel MOSFET

AFP1913E Distributor