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AFP1933 - P-Channel MOSFET

This page provides the datasheet information for the AFP1933, a member of the AFP1933-Alfa P-Channel MOSFET family.

Description

AFP1933, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -30V/-0.55A, R =DS(ON) 900 mΩ@ VGS =-10V -30V/-0.35A, R =DS(ON) 1000 mΩ@ VGS =-4.5V -30V/-0.15A, R =DS(ON) 1800 mΩ@ VGS =-2.5V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design.

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Datasheet Details

Part number AFP1933
Manufacturer Alfa-MOS
File Size 557.83 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1933 Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP1933, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFP1933 30V P-Channel Enhancement Mode MOSFET Features -30V/-0.55A, R =DS(ON) 900 mΩ@ VGS =-10V -30V/-0.35A, R =DS(ON) 1000 mΩ@ VGS =-4.5V -30V/-0.15A, R =DS(ON) 1800 mΩ@ VGS =-2.
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