AFP1933 Datasheet | Alfa-MOS

Description AFP1933, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-363 ) 30V P-Channel Enhancement Mode MOSFET Features -30V/-0.55A, R =DS(ON) 900 mΩ@ VGS =-10V -30V/-0.35A, R =DS(ON) 1000 mΩ@ VGS =-4.5V -30V/-0.15A, R =DS(ON) 1800 mΩ@ VGS =-2.5V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories PA Switch Level Switch Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 Ordering Information Part Ordering No. Part Marking Package AFP1933S36RG...