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AFP2913W - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP2913W, a member of the AFP2913W-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP2913W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • z -25V/-4.5A,RDS(ON)=120mΩ@VGS=-10V z -25V/-3.8A,RDS(ON)=155mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design.

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Datasheet Details

Part number AFP2913W
Manufacturer Alfa-MOS
File Size 550.86 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP2913W Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP2913W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) AFP2913W 25V P-Channel Enhancement Mode MOSFET Features z -25V/-4.5A,RDS(ON)=120mΩ@VGS=-10V z -25V/-3.8A,RDS(ON)=155mΩ@VGS=-4.
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