AFP2925W Datasheet | Alfa-MOS

Description AFP2925W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) Features z -20V/-3.6A,RDS(ON)=50mΩ@VGS=-4.5V z -20V/-3.2A,RDS(ON)=63mΩ@VGS=-2.5V z -20V/-1.2A,RDS(ON)=84mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Application z Charger Switches and Load Switches for Portable Devices z DC/DC Converters Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Ordering Information Part Ordering No. Part Marking Package AFP2925WFN226RG W25YW DFN2X2-6L...