Datasheet4U Logo Datasheet4U.com

AFP3413 - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP3413, a member of the AFP3413-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP3413, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=125mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=205mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

📥 Download Datasheet

Datasheet preview – AFP3413

Datasheet Details

Part number AFP3413
Manufacturer Alfa-MOS
File Size 519.50 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP3413 Datasheet
Additional preview pages of the AFP3413 datasheet.

📁 Similar Datasheet

Other Datasheets by Alfa-MOS

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFP3413, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP3413 20V P-Channel Enhancement Mode MOSFET Features -20V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=125mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=205mΩ@VGS=-1.
Published: |