AFP3413 - P-Channel Enhancement Mode MOSFET

Product Overview

Alfa-MOS

Part number	AFP3413
Manufacturer	Alfa-MOS
File Size	519.50 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	AFP3413 Datasheet
Note	This datasheet PDF includes multiple part numbers: AFP3413, AFP3413-Alfa. Please refer to the document for exact specifications by model.
Additional preview pages of the AFP3413 datasheet.

AFP3413, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

-20V/-3.2A,RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.6A,RDS(ON)=125mΩ@VGS=-2.5V -20V/-1.5A,RDS(ON)=205mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Published: Dec 11, 2018 |