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AFP3415EA - P-Channel MOSFET

Download the AFP3415EA datasheet PDF. This datasheet also covers the AFP3415EA-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFP3415EA, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-4.5A,RDS(ON)=41mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=54mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=70mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP3415EA-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP3415EA
Manufacturer Alfa-MOS
File Size 690.24 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3415EA Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP3415 P-Channel Enhancement Mode MOSFET
AFP3411 P-Channel MOSFET
AFP3413 P-Channel Enhancement Mode MOSFET
AFP3413A P-Channel MOSFET
AFP3401AS P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFP3415EA, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP3415EA 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.5A,RDS(ON)=41mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=54mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=70mΩ@VGS=1.
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