AFP3415EA Datasheet | Alfa-MOS

Description AFP3415EA, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.5A,RDS(ON)=41mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=54mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=70mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP3415EAS23RG 15YW SOT-23 ϡʳ 15...