Alfa-MOS AFP3415EA
P-Channel MOSFET
| Part No. | AFP3415EA |
|---|---|
| Datasheet | AFP3415EA Download |
| Manufacturer |  Alfa-MOS |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFP3415EA, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23 ) AFP3415EA 20V P-Channel Enhancement Mode MOSFETFEATURES
-20V/-4.5A,RDS(ON)=41mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=54mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=70mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 Symbol G S DDESCRIPTION
Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP3415EAS23RG 15YW SOT-23 ϡʳ 15 parts
