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AFP3413A - P-Channel MOSFET

This page provides the datasheet information for the AFP3413A, a member of the AFP3413A-Alfa P-Channel MOSFET family.

Description

AFP3413A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V -20V/-1.2A,RDS(ON)=230mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

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Datasheet preview – AFP3413A

Datasheet Details

Part number AFP3413A
Manufacturer Alfa-MOS
File Size 651.32 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3413A Datasheet
Additional preview pages of the AFP3413A datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP3413A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP3413A 20V P-Channel Enhancement Mode MOSFET Features -20V/-2.6A,RDS(ON)=120mΩ@VGS=-4.5V -20V/-2.2A,RDS(ON)=170mΩ@VGS=-2.5V -20V/-1.2A,RDS(ON)=230mΩ@VGS=-1.
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