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AFP3415 Datasheet PDF

Alfa-MOS AFP3415

P-Channel Enhancement Mode MOSFET

Part No. AFP3415
Datasheet AFP3415 Download
Manufacturer
Alfa-MOS
Description P-Channel Enhancement Mode MOSFET
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AFP3415 datasheet page 1 preview

GENERAL DESCRIPTION

AFP3415, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin

DESCRIPTION

( SOT-23-3L ) AFP3415 20V P-Channel Enhancement Mode MOSFET

FEATURES

-20V/-4.9A,RDS(ON)=43mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=55mΩ@VGS=2.5V -20V/-2.2A,RDS(ON)=75mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP3415S23RG 15YW SOT-23-3L ϡʳ 15 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W we
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